STE250N06 250A 60V N-channel Enhancement Mode Fast Power Mos Transistor

STE250N06

1/pieces

Shenzhen

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# Attribute Parameter
1Repetitive Peak Reverse Voltage60V
2RMS Forward Current250A
3EncapsulationISOTOP
4Operating Temperature-55 to 150°C
5Weight27g

STE250N06 250A 60V N-channel Enhancement Mode Fast Power Mos Transistor

FEATURES
• Typical Rds(on) = 0.075 Ω
• High Current Power Module
• Avalancherugged Technology
• Very Large Soa - Large Peak Power Capability
• Easy To Mount
• Same Current Capability For The Two Source Terminals
• Extremely Low Rth (junction To Case)
• Very Low Internal Parasitic Inductance
• Isolated Package Ul Recognized

Applications

• Smps & Ups
• Motor Control
• Welding Equipment
• Output Stage For Pwm, Ultrasonic Circuits

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