STE250N06 250A 60V N-channel Enhancement Mode Fast Power Mos Transistor
FEATURES
• Typical Rds(on) = 0.075 Ω
• High Current Power Module
• Avalancherugged Technology
• Very Large Soa - Large Peak Power Capability
• Easy To Mount
• Same Current Capability For The Two Source Terminals
• Extremely Low Rth (junction To Case)
• Very Low Internal Parasitic Inductance
• Isolated Package Ul Recognized
Applications
• Smps & Ups
• Motor Control
• Welding Equipment
• Output Stage For Pwm, Ultrasonic Circuits
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