DM2G75SH12A DAWIN IGBT Module (DM2G75SH12A PDF)

DM2G75SH12A

1/pieces

Shenzhen

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# Attribute Parameter
1OriginKorea
2Operating temperature range– 40 to +125°C
3Nominal Voltage1200V
4Rated Current75A
5EncapsulationModule

DM2G75SH12A IGBT Module

Insulated Gate Bipolar Transistor Module


FEATURES

• Low Drive Power

• Low VCE(sat)
• Discrete Super-Fast Recovery
• ree-Wheel Diode
• High Frequency Operation
• Isolated Baseplate for Easy
• Heat Sinking


TYPICAL APPLICATIONS
* Rectified For General Use• AC Motor Control
• Motion/Servo Control
• UPS
• Welding Power Supplies

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